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IXTA120N075T2
IXTP120N075T2
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-263 (IXTA) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 5 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
38
62
4740
585
75
13
33
21
18
78
24
23
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.60 ° C/W
R thCH
TO-220
0.50
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
V GS = 0V
120
A
I SM
V SD
t rr
I RM
Q RM
Repetitive, Pulse width limited by T JM
I F = 60A, V GS = 0V, Note 1
I F = 60A, V GS = 0V
-di/dt = 100A/ μ s
V R = 37V
50
4
100
480
1.3
A
V
ns
A
nC
TO-220 (IXTP) Outline
Notes: 1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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